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The interface mechanism of photoluminescence in carbonized porous silicon

✍ Scribed by B. M. Kostishko; Yu. S. Nagornov; S. Ya. Salomatin; Sh. R. Atazhanov

Book ID
110137972
Publisher
SP MAIK Nauka/Interperiodica
Year
2004
Tongue
English
Weight
53 KB
Volume
30
Category
Article
ISSN
1063-7850

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## Abstract We have fabricated porous silicon films with photoluminescence (PL) peak wavelengths in the range of 560–710 nm. It was found that a double‐peak‐structured PL band frequently appears in such porous silicon films with central PL peak positions in the range of 590–660 nm. When their PL ex