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The (InGa)As-(InAl)As resonant tunnelling double barrier structure subjected to a transverse magnetic field

โœ Scribed by L.A. Cury; A. Celeste; B. Goutiers; E. Ranz; J.C. Portal; D.L. Sivco; A.Y. Cho


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
284 KB
Volume
7
Category
Article
ISSN
0749-6036

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โœ C.R.H. White; M.S. Skolnick; L. Eaves; M.L. Leadbeater; M. Henini; O.H. Hughes; ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 373 KB

## Electroluminescence (EL) and impact ionisation phenomena in an asyssaetric GaAs/(AlGa)As double barrier resonant tunnelling structure are investigated. Determination of the charge density and electric field distribution throughout the structure enables a detailed analysis of impact ionisation p