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The influence of the Rashba interaction on spin accumulation and spin current of semiconductor based finite width quantum rings

✍ Scribed by S. Nikipar; S. Hassanpour Bourkheili; A. Phirouznia


Book ID
112181150
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
617 KB
Volume
249
Category
Article
ISSN
0370-1972

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We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined e