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The influence of the radial ion drift in the population densities in cw argon ion lasers

โœ Scribed by H.-B. Valentini


Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
303 KB
Volume
81
Category
Article
ISSN
0375-9601

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Aluminum nitride (AlN) films, using a dual ion beam sputtering, were prepared over the argon ion beam voltage ranging from 800 to 1200 V at room temperature. The AlN films were (0 0 2) and (1 0 0) planes. Excepting for operating at 1000 V, the AlN films exhibited the (0 0 2) preferred orientation. T