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The influence of the properties of evaporation source on the discharge characteristics of MgO film

✍ Scribed by Yoshikazu Tanaka; Shih Hsiu Hsiao; Yasuhiko Morimoto; Akihiro Nakao; Ari Ide-Ektessabi

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
418 KB
Volume
261
Category
Article
ISSN
0168-583X

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Using CuI1i~Se3.5 as source material epitaxial layers are obtained on (111)A-und (100)oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 720-870 K. Tho composition of the films is between CuInSe, and C~In~Se3.5. The structural properties of the films are similar