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The influence of the accumulation layer on the conductance characteristics of MIS tunnel junctions

โœ Scribed by J. Zavadil


Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
146 KB
Volume
43
Category
Article
ISSN
0375-9601

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We calculate the IยฑV characteristic of a tunnel junction containing resonant centers in the barrier distributed over a finite energy band and having an arbitrary location within the barrier. The onsite Coulomb interaction, U, between two electrons of opposite spin causes the IยฑV characteristic to sh