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The influence of sputtering, range shortening and stress-induced outdiffusion on the retention of xenon implanted in silicon

✍ Scribed by P. Blank; K. Wittmaack; F. Schulz

Publisher: Elsevier Science
Year: 1976
Weight: 515 KB
Volume: 132
Category: Article
ISSN: 0029-554X
DOI: 10.1016/0029-554x(76)90763-1

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