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The influence of silicon on microstructure and electrical properties of La-doped BaTiO3ceramics

โœ Scribed by H. -P. Abicht; H. T. Langhammer; K. -H. Felgner


Publisher
Springer
Year
1991
Tongue
English
Weight
645 KB
Volume
26
Category
Article
ISSN
0022-2461

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## Dielectric constant Leakage current density La-doped BaTiO 3 thin films with 200 nm thickness were fabricated by r.f. magnetron sputtering system onto Pt/Ti/SiO 2 /Si substrates. The effects of post-annealing and the amount of dopant on microstructure and electrical properties were studied. The