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The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells

✍ Scribed by Li Shuti; Fan Guanghan; Zhou Tianming; Wang Hao; Sun Huiqing; Zheng Shuwen; Guo Zhiyou; Tan Chunhua

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
199 KB
Volume
349
Category
Article
ISSN
0921-4526

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πŸ“œ SIMILAR VOLUMES

Effect of Si doping on the photoluminesc
Effect of Si doping on the photoluminescence properties of AlGaInP/GaInP multiple quantum wells
✍ Li Shuti; Fan Guanghan; Zhou Tianming; Zheng Shuwen; Sun Huiqing πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 164 KB

The influence of Si doping on the photoluminescence (PL) properties of (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P/Ga 0.5 In 0.5 P multiple-quantum-wells (MQWs) was studied. For the samples without p-type layers, the PL peak wavelength from (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P/Ga 0.5 In 0.5 P MQWs did not vary when Si w