𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Hole-level structure of double -doped quantum wells in Si: The influence of the split-off band

✍ Scribed by I. Rodríguez-Vargas; L.M. Gaggero-Sager

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
297 KB
Volume
389
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Exchange Energy of a Hole Gas and the Th
Exchange Energy of a Hole Gas and the Thomas-Fermi-Dirac Approximation in p-Type δ-Doped Quantum Wells in Si and GaAs
✍ L.M. Gaggero-Sager 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 133 KB 👁 2 views

We present the electronic structure of p-type d-doped quantum wells in Si and GaAs including exchange effects in the Thomas-Fermi-Dirac approximation. We also carry out Schro ¨dinger-Poisson self-consistent calculations considering the particularities the exchange potential has in the Local Density

A systematic investigation of the effect
A systematic investigation of the effect of the material and the structural parameters on the hole states in strained p–Si/Si1 − xGex/p–Si selectively doped double heterojunctions structures
✍ Georgios Hionis; Georgios P. Triberis 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 143 KB

The hole wavefunctions, the energy levels and the sheet density of a strained p-Si/Si 1-x Ge x /p-Si selectively doped double heterojunction are investigated at T = 0 K, solving the Schrödinger and Poisson equations self-consistently. We present a systematic study taking into account all the modulat