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The influence of preamorphization on the properties of shallow p+ n-junctions in silicon radiation detectors

✍ Scribed by J. von Borany; R. Kögler


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
369 KB
Volume
326
Category
Article
ISSN
0168-9002

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Influence of irradiation by neutrons on
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In the framework of WODEAN project of CERN-RD50 collaboration the photoconductivity spectra of p + -n-n + Si detectors were investigated depending on irradiation by high energy neutrons. The samples were irradiated by neutrons to the fluencies 1 Â10 13 -1 Â10 16 cm 2 . The extrinsic photoconductivit