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Influence of irradiation by neutrons on the properties of p+–n–n+ Si radiation detectors

✍ Scribed by Vidmantas Kalendra; Vaidotas Kažukauskas; Neimantas Vainorius; Juozas V. Vaitkus

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
254 KB
Volume
404
Category
Article
ISSN
0921-4526

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✦ Synopsis

In the framework of WODEAN project of CERN-RD50 collaboration the photoconductivity spectra of p + -n-n + Si detectors were investigated depending on irradiation by high energy neutrons. The samples were irradiated by neutrons to the fluencies 1 Â10 13 -1 Â10 16 cm 2 . The extrinsic photoconductivity spectra indicated that upon irradiation deep levels (DL) below the middle of the band gap were created. Their activation energies were in the ranges 0.49-0.52, 0.77-0.81, 0.88-0.91, and 1.02-1.11 eV. The effective concentrations of these levels were depending on the fluencies and on the isochronal thermal treatments at low temperatures. The changes of DL population induced by annealing have been compared with the steady state lifetimes and photoconductivity decay constants.

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✍ V. Kalendra; V. Kažukauskas; N. Vainorius; J. V. Vaitkus; V. Bozhko 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 425 KB

## Abstract The defect properties of Si ionizing radiation detectors were investigated depending on the irradiation by high energy neutrons. The investigations were performed in the framework of WODEAN project of CERN‐RD50 collaboration. The p^+^‐n‐n^+^ samples were irradiated with the fluencies 1·