𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The influence of ohmic back contacts on the properties of a-Si:H Schottky diodes

✍ Scribed by I. Ay; H. Tolunay

Book ID
108271550
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
200 KB
Volume
51
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

The influence of metal work function on
The influence of metal work function on electrical properties of metal/ a-SiC:H Schottky diodes
✍ L. Magafas; N. Georgoulas; A. Thanailakis πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 515 KB

Electrical properties of Schottky diodes on rf sputtered a-SiC:H thin films for different metals (Mg,In,Al,Pd) were investigated. The M(=Mg,In,A1,Pd)/a-SiC:H Schottky diodes were found to exhibit very good rectification properties, with a turn-on voltage varying from 0-4 to 0-8V, depending on the to