Influence of interstitial ordering of ni
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Peter Jung; Klaus Trenzinger
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Article
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1974
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Elsevier Science
β 557 KB
In tantalum samples containing more than 1.2 at.?; of nitrogen in solid solution, electrical resietivi,ty is reduced by up to 59 per cent during annealing. It is shown that this reduction is caused by partial ordering of the nitrogen atoms in the tantalum lattice. Experimental results on the depende