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The influence of impurities on the dislocation splitting in semiconductors

โœ Scribed by Filippov, A. P.

Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
386 KB
Volume
110
Category
Article
ISSN
0031-8965

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The influence of impurity-doping on temp
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โœ M.H. Saito; T. Tsuzuku ๐Ÿ“‚ Article ๐Ÿ“… 1973 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 526 KB

## By means of an electron microscope, the width of dislocation ribbons in a stress-annealed pyrolytic graphite and doped with iodine chloride (ICl) and bromine was investigated as a function of temperature in the range 100ยฐK to 300ยฐK. The impurity content amounted to 1.1 at % for ICI and 1.6 at %