Influence of the SiβGe interface on phon
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M.W Dashiell; U Denker; O.G Schmidt
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Article
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2002
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Elsevier Science
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English
β 111 KB
Intense photoluminescence (PL) is observed from Ge hut clusters grown by molecular beam epitaxy on Si (0 0 1). Phononless radiative recombination results from three-dimensional carrier conΓΏnement of electrons in the surrounding tensile-strained Si and holes within the Ge hut. Post-growth annealing e