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The influence of Al composition on point defect incorporation in AlGaN

✍ Scribed by Henry, T. A.; Armstrong, A.; Allerman, A. A.; Crawford, M. H.

Book ID
121080428
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
591 KB
Volume
100
Category
Article
ISSN
0003-6951

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Growth pressure-dependent generation of trap states in AlGaN/GaN heterostructures was analysed. AlGaN/GaN heterostructures were grown on sapphire substrates at two different pressures of AlGaN layer growth, 150 and 200 Torr, with other growth parameters unchanged. The measured Al mole fraction in Al