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The influence of a poly-Si intermediate layer on the crystallization behaviour of Ni-Ti SMA magnetron sputtered thin films

✍ Scribed by R.M.S. Martins; F.M. Braz Fernandes; R.J.C. Silva; L. Pereira; P.R. Gordo; M.J.P. Maneira; M. Beckers; A. Mücklich; N. Schell

Publisher
Springer
Year
2006
Tongue
English
Weight
783 KB
Volume
83
Category
Article
ISSN
1432-0630

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Within the frame of this work, low temperature Ti-Si-C films were deposited on high-speed steel and stainless steel substrates by combined dc/rf magnetron co-sputtering. Composition analysis revealed the existence of two distinct regions: (i) a silicon doped sub-stoichiometric titanium carbide zone