The importance of high-index surfaces for the morphology of GaAs quantum dots
β Scribed by Platen, J.; Kley, A.; Setzer, C.; Jacobi, K.; Ruggerone, P.; Scheffler, M.
- Book ID
- 120415491
- Publisher
- American Institute of Physics
- Year
- 1999
- Tongue
- English
- Weight
- 551 KB
- Volume
- 85
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.369720
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π SIMILAR VOLUMES
The structural and the optical propertics of lnAs layers grown on high index GaAs surfaces by molecular beam epitaxy are investigated in order to understand the formation and the self-organization of quantum dots (Ql)s) on novel index surfaces. Four different GaAs substrate orientations have been ex
In this work we report the effects of the growth interruption on the optical and microscopic properties of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy on ( 100) and (311)B oriented GaAs substrates. The growth interruption applied after the deposition of the InAs layer stron