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The Impact of HCl Precleaning and Sulfur Passivation on the Al 2 O 3 /Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors

✍ Scribed by Xue, Bai-Qing; Chang, Hu-Dong; Sun, Bing; Wang, Sheng-Kai; Liu, Hong-Gang

No coin nor oath required. For personal study only.

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