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The ideal (111),(110) and (100) surfaces of Si, Ge and GaAs; A comparison of their electronic structure

✍ Scribed by I. Ivanov; A. Mazur; J. Pollmann

Publisher: Elsevier Science
Year: 1980
Weight: 58 KB
Volume: 92
Category: Article
ISSN: 0167-2584
DOI: 10.1016/0167-2584(80)90080-8

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