The intersubband transitions in Si d-doped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the Schro ¨dinger and Poisson equations selfconsistently. From our calculations, it is f
✦ LIBER ✦
The hydrostatic pressure effects on intersubband optical absorption of n -type δ-doped quantum well in GaAs
✍ Scribed by O. Oubram; O. Navarro; L.M. Gaggero-Sager; J.C. Martínez-Orozco; I. Rodríguez-Vargas
- Book ID
- 113914374
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 520 KB
- Volume
- 14
- Category
- Article
- ISSN
- 1293-2558
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## Abstract The theoretical study of linear and nonlinear optical absorption, and the nonlinear corrections to the refractive index in a GaAs n‐type delta‐doped field effect transistor is preformed taking into account the effects of applied hydrostatic pressure on the quantum well energy states, th
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