The drain currents of nanometer double-gate MOSFETs with gate lengths in the range from 100 to 5 nm are calculated using a hierarchy of simulation approaches. By comparing Monte Carlo (MC), drift-di usion (DD), and hydrodynamic (HD) simulation results the suitability of the DD and HD models for the
The handbook of nanotechnology. Nanometer structures: theory, modeling, and simulation
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 105 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1369-7021
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