The Hall effect in a-GdxSi1−x at the metal–insulator transition

✍ Scribed by W. Teizer; F. Hellman; R.C. Dynes

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 493 KB
• Volume: 18
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)01011-1

✦ Synopsis

We have measured the Hall e ect in 3-d amorphous GdxSi1-x ÿlms in the critical regime of the metal-insulator transition (MIT) at T = 400 mK. a-GdxSi1-x exhibits a large negative magnetoresistance which is independent of the orientation of the magnetic ÿeld H with respect to the ÿlm and allows an in situ tuning of the conductivity through the MIT with H . We ÿnd an electron-like Hall coe cient RH. As the material becomes less metallic, RH increases. We ÿnd that RH is a critical quantity with critical exponent ∼ -1 (RH ∼ (H -HC) -1 ).