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Scaling in the metal-insulator transition of the fractional quantum Hall effect

โœ Scribed by S. Koch; R.J. Haug; K. von Klitzing; K. Ploog


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
307 KB
Volume
184
Category
Article
ISSN
0921-4526

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We have measured the Hall e ect in 3-d amorphous GdxSi1-x รฟlms in the critical regime of the metal-insulator transition (MIT) at T = 400 mK. a-GdxSi1-x exhibits a large negative magnetoresistance which is independent of the orientation of the magnetic รฟeld H with respect to the รฟlm and allows an in