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The growth of ZnSe and other wide-bandgap II-VI semiconductors by MOCVD

โœ Scribed by Wright, P J; Cockayne, B; Parbrook, P J; O'Donnell, K P; Henderson, B


Book ID
111694688
Publisher
Institute of Physics
Year
1991
Tongue
English
Weight
504 KB
Volume
6
Category
Article
ISSN
0268-1242

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Characterisation of ZnSe and other IIโ€“VI
โœ Thomas Wichert; Thomas Krings; Herbert Wolf ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 965 KB

## In the II-VI compounds ZnS, CdS, ZnSe, CdSe, ZnTe and CdTe doped with In, the formation of In,-V, pairs is shown to occur using the radioactive dopant "IIn along with the perturbed yy angular correlation technique. For CdS and ZnSe, the migration energy of the metallic vacancy defect V, and it