✦ LIBER ✦

Characterisation of ZnSe and other II–VI semiconductors by radioactive dopants

✍ Scribed by Thomas Wichert; Thomas Krings; Herbert Wolf

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 965 KB
Volume: 185
Category: Article
ISSN: 0921-4526
DOI: 10.1016/0921-4526(93)90251-z

No coin nor oath required. For personal study only.

✦ Synopsis

In the II-VI compounds

ZnS, CdS, ZnSe, CdSe, ZnTe and CdTe doped with In, the formation of In,-V, pairs is shown to occur using the radioactive dopant "IIn along with the perturbed yy angular correlation technique.

For CdS and ZnSe, the migration energy of the metallic vacancy defect V, and its binding energy to the donor In is determined. The creation of V, defects under different experimental conditions is investigated, such as stoichiometry, temperature, electron irradiation and doping with Li atoms.

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