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The GaN Growth by a Hot Filament Metalorganic Vapor Phase Deposition Technique

✍ Scribed by Boufaden, T. ;Rebey, A. ;Halidou, I. ;Chine, Z. ;Haffouz, S. ;El Jani, B.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 142 KB
Volume: 176
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199911)176:1<411::aid-pssa411>3.0.co;2-9

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✦ Synopsis

GaN layers were grown on c-plane sapphire by metalorganic vapor phase epitaxy (MOVPE) using a hot tungsten filament for the ammonia (NH 3 ) precracking. A two flows horizontal growth chamber was specially designed to eliminate parasitic reactions between TMG and NH 3 and avoid TMG decomposition on the hot tungsten array located between the upper ammonia inlet and the substrate. Samples were grown under different (N 2 : H 2 ) carrier gas compositions for different filament temperatures ranging from 500 to 2500 K. The hot tungsten filament improves the efficiency of the NH 3 decomposition. The ratio of the growth rates obtained with and without the filament is about 2. This improvement is related to the increase of NH 2 radicals issuing from the decomposition of ammonia on the hot filament as predicted by thermodynamic calculations

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