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The fundamental absorption edge of high crystalline quality GaN and that of amorphous GaN grown at low temperature

✍ Scribed by P. Trautman; K. Pakuła; J. M. Baranowski


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
129 KB
Volume
2
Category
Article
ISSN
1862-6351

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