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The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si

✍ Scribed by J. Coutinho; R. Jones; S. Öberg; P.R. Briddon

Book ID
108238329
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
204 KB
Volume
340-342
Category
Article
ISSN
0921-4526

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The electrical activity of nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon treated by hydrogen plasma was investigated. It was observed that in the hydrogenated NCZ samples the absorption line intensity of m-N±O (N±O complexes inducing middle infrared absorption lines) de