๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The finite state machine for control of high frequency power electronics

โœ Scribed by Lefley, P.W.; Barnes, S.A.; Smith, G.A.


Book ID
114462051
Publisher
IEEE
Year
2000
Tongue
English
Weight
974 KB
Volume
14
Category
Article
ISSN
0950-3366

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Solid-State High-Frequency Power
โœ Brown, C.S. ๐Ÿ“‚ Article ๐Ÿ“… 1983 ๐Ÿ› The Institution of Electrical Engineers โš– 202 KB
The hierarchical control of ST-finite-st
โœ Peter E Caines; Vineet Gupta; Gang Shen ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 632 KB

This paper follows (Caines and Wei, 1995) where a new notion of state aggregation for finite machines was introduced via the concept of the dynamical consistency (DC) relation between the blocks of states in any given state-space partition n. This formulation results in a definition of high-level dy

State of the art of high temperature pow
โœ Cyril Buttay; Dominique Planson; Bruno Allard; Dominique Bergogne; Pascal Bevila ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 387 KB

High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500 โ€ข C, whereas silicon is limited to 150-200 โ€ข C. Applications such as transportation or a deep oil