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The field dependence of the dc current in amorphous semiconductors

✍ Scribed by Harald Overhof

Book ID
118333351
Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
157 KB
Volume
77-78
Category
Article
ISSN
0022-3093

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## Abstract The implicit and explicit contributions to the temperature dependence of the absorption edge in some amorphous forms of Si, Ge, GaP, and GaAs are reported. The results are used to test a model in which the valence (conduction) band states in amorphous material are a superposition of cry