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On the temperature dependence of dispersion parameters in amorphous semiconductors

โœ Scribed by Koji Seto; Takashi Nagase; Hiroyoshi Naito

Book ID
117148951
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
109 KB
Volume
227-230
Category
Article
ISSN
0022-3093

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๐Ÿ“œ SIMILAR VOLUMES

The Temperature Dependence of the Absorp
The Temperature Dependence of the Absorption Edge in Some Amorphous Semiconductors
โœ N. Connell ๐Ÿ“‚ Article ๐Ÿ“… 1972 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 404 KB

## Abstract The implicit and explicit contributions to the temperature dependence of the absorption edge in some amorphous forms of Si, Ge, GaP, and GaAs are reported. The results are used to test a model in which the valence (conduction) band states in amorphous material are a superposition of cry