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The far infrared energy gap of Ba1−xKxBiO3 thin films

✍ Scribed by F.J. Dunmore; H.D. Drew; E.J. Nicol; E.S. Hellman; E.H. Hartford


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
209 KB
Volume
235-240
Category
Article
ISSN
0921-4534

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✦ Synopsis


The far infrared transmission spectra of Bal_,K.~BiOa (x = 0.4) thin films, grown by molecular beam epitaxy on MgO substrates, were measured in the frequency range of 15 cm -1 to 200 cm -l, and temperature range from 9K to 86K. In the normal state the transmission is independent of frequency. The transmission in the superconducting state approaches zero at zero frequency then rises with frequency to a peak whose position scales with the critical temperature and reduces as the temperature increases. The far infrared transmission curves are better described by strong coupling Eliashberg theory rather than weak coupling Mattis-Bardeen theory. From the Eliashberg calculation, which is based on the a2F(w) data from tunneling measurements, the London penetration depth ,~L(0) of a T: = 18 K sample is found to be 5500+ 100 It and the energy gap is 2A(0) = 4.0kT~ = 50.1 cm -1 (6.2 meV). These results show that the strong coupling dirty limit gives distinctly different electrodynamics than the weak COUl)ling dirty limit.


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The physical properties of Ba~-,K, BiO~ including transport coefficients, optical spectra, Pa®~n spectra, the upper critical field and superconducting energy gap were measured on thin films. From the experimental results, we firmly conclude that the Bal-xK.BiO3 is close to a band metal in its metall