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The evolution of the ion implantation damage in device processing

✍ Scribed by M. L. Polignano; I. Mica; V. Bontempo; F. Cazzaniga; M. Mariani; A. Mauri; G. Pavia; F. Sammiceli; G. Spoldi


Publisher
Springer US
Year
2008
Tongue
English
Weight
346 KB
Volume
19
Category
Article
ISSN
0957-4522

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It has formerly been shown that low-damage levels, produced during the implantation doping of diamond as a semiconductor, anneal easily while high levels ''graphitize" (above about 5.2 Γ‚ 10 15 ions/ cm 2 ). The difference in the defect types and their profiles, in the two cases, has never been direc