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The electronic and optical properties of InGaAs/InP and InAlAs/InP superlattices

✍ Scribed by Chiara Ghidoni; Rita Magri; Stefano Ossicini

Book ID
117215874
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
250 KB
Volume
489
Category
Article
ISSN
0039-6028

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πŸ“œ SIMILAR VOLUMES

Raman characterization of an operating I
Raman characterization of an operating InAlAsβ€”InGaAsβ€”InP high electronic mobility transistor
✍ N. Matrullo; M. Constant; G. Sagon; R. Fauquembergue; A. Leroy πŸ“‚ Article πŸ“… 1995 πŸ› John Wiley and Sons 🌐 English βš– 475 KB

## Abstract Raman scattering was used to probe electronic properties in In‐based structures. First, Raman signatures of undoped and doped InAlAs and InGaAs bulk materials and Raman spectra of InAlAsβ€”InGaAs heterostructures were recorded. Raman scattering by coupled longitudinal optic phonons and tw