The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO 2 on p- and n-type silicon

✍ Scribed by Dueñas, S; Castán, H; García, H; Barbolla, J; Kukli, K; Aarik, J; Aidla, A

• Book ID: 121228553
• Publisher: Institute of Physics
• Year: 2004
• Tongue: English
• Weight: 372 KB
• Volume: 19
• Category: Article
• ISSN: 0268-1242
• DOI: 10.1088/0268-1242/19/9/013