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The electrical characteristics of Sn/methyl-red/p-type Si/Al contacts

✍ Scribed by M.E. Aydın; A. Türüt

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
213 KB
Volume
84
Category
Article
ISSN
0167-9317

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The current-voltage (I-V) characteristics of the Al/NPB/p-Si contact shows rectifying behavior with a potential barrier formed at the contact interface. The barrier height and ideality factor values of 0.65 eV and 1.33 are measured at the forward bias of the diode. The barrier height of the Al/NPB/p