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The electrical breakdown properties of GaAs layers grown by molecular beam epitaxy at low temperature

✍ Scribed by Luo, J K; Thomas, H; Morgan, D V; Westwood, D; Williams, R H


Book ID
126265004
Publisher
Institute of Physics
Year
1994
Tongue
English
Weight
438 KB
Volume
9
Category
Article
ISSN
0268-1242

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