Electrical and thermal properties of semiconducting B 12 P 2 wafers designed as B 12 (Si 2 ) x (P 2 ) 1Ψx were measured up to high temperature. The wafers were grown at 11003C by thermal decomposition of a B 2 H 6 +PH 3 +H 2 gas mixture at 11003C on Si(100) and Si(111) substrates in long-term experi
β¦ LIBER β¦
The electrical and optical properties of (Be, A1)B12
β Scribed by O.A. Golikova; M.M. Kazanin; V.M. Orlov; E.N. Tkalenko; M.I. Fedorov
- Book ID
- 116013248
- Publisher
- Elsevier Science
- Year
- 1979
- Weight
- 239 KB
- Volume
- 67
- Category
- Article
- ISSN
- 0022-5088
No coin nor oath required. For personal study only.
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Thin film of poly(5-isopropylidenecyclo-1,4-vinylene-2,3-dicarboxylicacidamide-s-methyl hydrazinecarbodithioate) (II) (Scheme 1 ) of 5 mm thickness was prepared. The dielectric properties of the prepared sample were studied as a function of frequency and temperature, and the results were analyzed by