Electrical and Thermal Properties of B12P2 Wafers

✍ Scribed by Y. Kumashiro; T. Yokoyama; K. Sato; Y. Ando; S. Nagatani; K. Kajiyama

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 180 KB
• Volume: 154
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.2000.8807

✦ Synopsis

Electrical and thermal properties of semiconducting B 12 P 2 wafers designed as B 12 (Si 2 ) x (P 2 ) 1؊x were measured up to high temperature. The wafers were grown at 11003C by thermal decomposition of a B 2 H 6 +PH 3 +H 2 gas mixture at 11003C on Si(100) and Si(111) substrates in long-term experiments. The electrical conductivity obeyed band conduction. Thermoelectric power showed high values of 800+1000 V/K at 400+800 K. Measurement of the speci5c heat capacity by di4erential scanning calorimetry (DSC) yielded Debye temperatures of 1200+1300 K and Gru4 neisen parameters of 0.8+0.9. Thermal di4usivity was measured with the use of ring-6ash light in the laser 6ash method. The weak temperature dependence of thermal conductivity re6ects phonon scattering by Si impurities rather than by grain boundaries. Low electrical conductivity produces lower thermoelectric 5gures-of-merit than BP wafers despite the high thermoelectric power.