The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu2+,Dy3+ thin films

✍ Scribed by O.M. Ntwaeaborwa; P.D. Nsimama; J.T. Abiade; E. Coetsee; H.C Swart

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 489 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.09.016

✦ Synopsis

In this study, SrAl 2 O 4 :Eu 2 + ,Dy 3 + thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 1C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He-Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at $ 530 nm. This emission was attributed to 4f 6 5d 1 -4f 7 transition of Eu 2 + . The highest PL intensity was observed from the films deposited at a substrate temperature of 400 1C. The effects of varying substrate temperature on the PL intensity were discussed.