The effects of intragrain defects on the local photoresponse of polycrystalline silicon solar cells
β Scribed by N. Inoue; C.W. Wilmsen; K.A. Jones
- Publisher
- Elsevier Science
- Year
- 1981
- Weight
- 962 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0379-6787
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β¦ Synopsis
Intragrain defects in Wacker cast and Monsanto zone-refined polycrystalline silicon materials were investigated using the electron-beaminduced current (EBIC) technique. The EBIC response maps were compared with etch pit, local diffusion length and local photoresponse measurements. It was determined that the Wacker polycrystalline silicon has a much lower density of defects than does the Monsanto polycrystalline silicon and that most of the defects in the Wacker material are not active recombination sites. A correlation was found between the recombination site density, as determined by EBIC, and the local diffusion length. It is shown that a large density of intragrain recombination sites greatly reduces the minority carrier diffusion length and thus can significantly reduce the photoresponse of solar cells.
π SIMILAR VOLUMES
A simplified three-dimensional analytical model is developed in order to simulate the effect of preferential doping along grain boundaries on the photoresponse of columnar-oriented fine-grain polycrystalline diffused solar cells. The preferential doping is known to create deep vertical junctions adj