The effect of deep states on the photovo
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R.K. Ahrenkiel
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Article
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1986
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Elsevier Science
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High densities of both bulk and interface states were found in CdZnS/ CuInSe2 thin film devices. Deep level transient spectroscopy studies showed that air baking removes minority carrier levels at 39 meV and 78 meV. Light induced capacitance indicated that charging of deep interface states reduced t