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The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors

✍ Scribed by Park, Jae Chul; Kim, Sang Wook; Kim, Chang Jung; Lee, Ho-Nyeon


Book ID
120340351
Publisher
IEEE
Year
2012
Tongue
English
Weight
240 KB
Volume
33
Category
Article
ISSN
0741-3106

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## Abstract The thermal activation effects on the stoichiometry of indium zinc oxide (IZO) thin‐film transistors (TFTs) deposited by radio frequency magnetron sputtering process under different oxygen pressure, were investigated as a function of annealing temperature and environment conditions. The