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Gamma radiation effects on indium-zinc oxide thin-film transistors

✍ Scribed by Indluru, A.; Holbert, K.E.; Alford, T.L.


Book ID
122361199
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
381 KB
Volume
539
Category
Article
ISSN
0040-6090

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## Abstract The thermal activation effects on the stoichiometry of indium zinc oxide (IZO) thin‐film transistors (TFTs) deposited by radio frequency magnetron sputtering process under different oxygen pressure, were investigated as a function of annealing temperature and environment conditions. The