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The effect of UV irradiation on temperature dependence of photoluminescence and photoacoustic response in porous silicon

✍ Scribed by S. N. Bashchenko; I. V. Blonskii; M. S. Brodyn; V. N. Kadan; Yu. G. Skryshevskii

Book ID
110125843
Publisher
Springer
Year
2001
Tongue
English
Weight
80 KB
Volume
46
Category
Article
ISSN
1063-7842

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An analysis about the change of photoluminescence (PL) intensity during ageing in porous silicon (p-Si) at room temperature (RT) is reported. PL measurements have been correlated to Fourier transform infrared spectrometry (FTIR), UV-Vis reflectance spectra (RS) and transmission electron microscopy (