Electron Irradiation Influence on Porous
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Zimin, S.P. ;Zimin, D.S. ;Ryabkin, Yu.V. ;Bragin, A.N.
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Article
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2000
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John Wiley and Sons
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English
β 84 KB
Changes of dc conductivity for the porous silicon (PS) with different morphology and different pictures of the depleted areas after the irradiation with high-energy electrons (2 MeV, 2 Γ 10 16 to 1 Γ 10 17 cm Β± Β±2 ) are presented. PS layers of 5Β±60% porosity were formed by anodization of n-type Si (