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The effect of thickness of delta-strained Layers in the design of polarization-insensitive semiconductor optical amplifiers

✍ Scribed by M.S. Wartak; P. Weetman

Book ID
119801017
Publisher
IEEE
Year
2004
Tongue
English
Weight
102 KB
Volume
16
Category
Article
ISSN
1041-1135

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πŸ“œ SIMILAR VOLUMES

On the design of polarization-insensitiv
On the design of polarization-insensitive semiconductor optical amplifiers
✍ M. S. Wartak; P. Weetman πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 111 KB

## Abstract We have used the 4 Γ— 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 ΞΌm InGaAsP/InP lattice matched system grown in the [001] direction with and

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In this paper, the aims of our study are to analyze the gain of semiconductor optical amplifiers with tensile strained multiple quantum wells and to examine the structure for polarization-insensitive characteristics for the purpose of showing the design guidelines. Since lasers with conventional lat