In this paper, the aims of our study are to analyze the gain of semiconductor optical amplifiers with tensile strained multiple quantum wells and to examine the structure for polarization-insensitive characteristics for the purpose of showing the design guidelines. Since lasers with conventional lat
On the design of polarization-insensitive semiconductor optical amplifiers
โ Scribed by M. S. Wartak; P. Weetman
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 111 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0895-2477
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โฆ Synopsis
Abstract
We have used the 4 ร 4 LuttingerโKohn Hamiltonian to analyse the presence of deltaโstrain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 ฮผm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated. ยฉ 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 227โ230, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10564
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